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MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
CM600HX-24A
IC ................................................................... 600A VCES ......................................................... 1200V Single Flatbase Type / Insulated Package / Copper (non-plating) base plate RoHS Directive compliant
APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152 137 121.7 110 0.5 99 94.5
Dimensions in mm
(3.81) 1.15 0.65 (7.4) 1.2 (3) TERMINAL t = 0.8 4.3 39 50 0.5 57.5 62 1.5 2.5 2.1
Pin positions with tolerance
(13.5)
(13.5) 7 4-M6 NUTS
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
(14) (14) 22 17 17 12 12 6 6
47
24
48
23
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
4.2
3.5
0 (7.75)
95 (102.25)
15 18.8
68.33 72.14
6.5 (21.14)
0.8
A 4-5.5 MOUNTING HOLES
13 17 (20.5)
(5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5
12.5 SECTION A
0.5
LABEL
C (47)
E (24)
Division of Dimension 0.5 to to to to to 3 6 30 120 400
Tolerance 0.2 0.3 0.5 0.8 1.2
C (48) TH1 (1)
NTC TH2 (2) G1 (15) E1 (16) C (22)
E (23)
over over over
3 6 30
* Use both terminals (C/E) to the external connection. CIRCUIT DIAGRAM
over 120
Jan. 2009
MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Tj Tstg Viso -- -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage
(Tj = 25C, unless otherwise specified)
Conditions G-E Short C-E Short (Note. 1) DC, TC = 90C Collector current (Note. 4) Pulse (Note. 1, 5) Maximum collector dissipation TC = 25C (Note. 1) Emitter current TC = 25C (Note. 4) (Free wheeling diode forward current) Pulse Junction temperature Storage temperature Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) Base plate flatness On the centerline X, Y Torque strength Main terminals M6 screw Torque strength Mounting M5 screw Weight (Typical)
Rating 1200 20 600 1200 3785 600 1200 -40 ~ +150 -40 ~ +125 2500 0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330
Unit V A W A C Vrms m N*m g
Note. 8: The base plate flatness measurement points are in the following figure.
-
-
-
Jan. 2009 2
MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS INVERTER PART
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter
(Tj = 25C, unless otherwise specified)
Conditions
VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 60mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 600A, VGE = 15V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = 15V, RG = 1.0 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6)
(IE = 600A) IE = 600A, VGE = 0V (Note. 6) Tj = 25C Tj = 125C Chip
VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG
IE = 600A, VGE = 0V Module lead resistance Main terminals-chip Thermal resistance per IGBT (Note. 1) per free wheeling diode (Junction to case) Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) TC = 25C Internal gate resistance TC = 125C External gate resistance
Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.7 1.4 1
Limits Typ. -- 7 -- 2.0 2.2 1.9 -- -- -- 3000 -- -- -- -- -- 19 2.6 2.16 2.5 0.6 -- -- 0.015 1 2 --
Max. 1 8 0.5 2.6 -- -- 100 9 2 -- 660 190 700 600 250 -- 3.4 -- -- -- 0.033 0.048 -- 1.3 2.6 10
Unit mA V A V
nF nC
ns
C V m
K/W
(Note. 2)
NTC THERMISTOR PART
Symbol R R/R B(25/50) P25
Note.1: 2: 3: 4: 5: 6:
Parameter Zero power resistance Deviation of resistance B constant Power dissipation
Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C
(Note. 7)
Min. 4.85 -7.3 -- --
Limits Typ. 5.00 -- 3375 --
Max. 5.15 +7.8 -- 10
Unit k % K mW
Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K]
Jan. 2009 3
MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
Chip Location (Top view)
Dimensions in mm (tolerance: 1mm)
(152) (121.7) (110) 28.2 39.2 50.2 73.9 84.9 95.9
24
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
47
(50)
23
30.0 40.5 45.2
48
Di Di Di Th
1 2
Di Di Di Tr Tr Tr
Tr Tr Tr
3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
85.3
21.6
29.4
40.0
50.6
74.3
96.3
0
LABEL SIDE
Each mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NTC thermistor
C(Cs)
C IC V VGE = 0V
C(Cs)
V
VGE = 15V
G E(Es)
(62)
C IE
G E(Es)
E
E
VCE(sat) test circuit
VEC test circuit
VGE 0V Load -VGE IE + VCC IC
90% 0%
IE trr
90% +VGE 0V -VGE
0A
t
RG
VCE
VGE
IC 0A td(on) tr td(off) tf
Irr 10%
1/2 Irr Qrr = 1/2 Irr trr
Switching time test circuit and waveforms
trr, Qrr test waveform
Jan. 2009 4
MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part
COLLECTOR CURRENT IC (A)
VGE = 20V
15
Tj = 25C 13
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1200 1000 800 600 400 200 0
4 3.5 3 2.5 2 1.5 1 0.5 0 0
VGE = 15V
12
11
10 9 0 1 2 3 4 5 6 7 8 9 10
Tj = 25C Tj = 125C 200 400 600 800 1000 1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part
FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 104
7 5 3 2
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
10
Tj = 25C
8
EMITTER CURRENT IE (A)
103
7 5 3 2
6
4 IC = 1200A 2 IC = 600A IC = 240A 0 6 8 10 12 14 16 18 20
102
7 5 3 2
Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4
101
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 103
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104
7 5 3 2
CAPACITANCE (nF)
102
SWITCHING TIME (ns)
Cies Coes
tf td(off) td(on) tr
103
7 5 3 2
101
100
Cres
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Conditions: 102 VCC = 600V 7 5 VGE = 15V 3 RG = 1.0 2 Tj = 125C Inductive load 101 1 10 23 5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Jan. 2009 5
MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104
7 Conditions: 5
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102
7
SWITCHING LOSS (mJ/pulse)
SWITCHING TIME (ns)
VCC = 600V VGE = 15V 3 IC = 600A Tj = 125C 2 Inductive load 103
7 5 3 2
5 3 2
Err Eoff Eon Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive load
2 3 5 7 102 2 3 5 7 103
td(off) td(on) tr tf
101
7 5 3 2
102 0 10
2
3
5 7 101
2
3
5 7 102
100 1 10
GATE RESISTANCE RG ()
COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103
7 5 3 2
SWITCHING LOSS (mJ/pulse)
Eon
Irr trr
7 5 3 2
Eoff
lrr (A), trr (ns)
102
102
7 5 3 2
101
7 5 3 2
Err
100 0 10
Conditions: VCC = 600V VGE = 15V IC, IE = 600A Tj = 125C Inductive load
2 3 5 7 102
101
7 5 3 2
2
3
5 7 101
100 1 10
Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive load
2 3 5 7 102 2 3 5 7 103
GATE RESISTANCE RG ()
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100
7 Single pulse, 5 TC = 25C 3 2 7 5 3 2
GATE-EMITTER VOLTAGE VGE (V)
IC = 600A VCC = 400V
15 VCC = 600V 10
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
10-1
10-2
7 5 3 2 Inverter IGBT part
5
0
0 500 1000 1500 2000 2500 3000 3500 4000 4500 GATE CHARGE QG (nC)
10-3
: Per unit base = Rth(j-c) = 0.033K/W Inverter FWDi part : Per unit base = Rth(j-c) = 0.048K/W
10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s)
Jan. 2009 6

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